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Wurtzite ferroelectric memory passes 10 billion cycles | NeoTeo

Xidian’s AlScN/AlN device exceeds 10¹⁰ write cycles by controlling nitrogen vacancies, a major endurance result for experimental wurtzite memory.

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NeoTeo (www.neoteo.com)
]]>https://citiverse.it/topic/6d5ebc0b-79fb-4080-a381-ae420699707e/xidian-pushes-wurtzite-ferroelectric-memory-past-10-billion-write-cyclesRSS for NodeSat, 26 Sep 2026 03:41:05 GMTSat, 26 Sep 2026 01:25:21 GMT60